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1

Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes

Ruggero Micheletto, Nobuki Yoshimatsu, Akio Kaneta, Yoichi Kawakami, Shigeo Fujita

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 745 KB

english, 2004

2

Photoreflectance study of crystalline silicon

Hidenori Moriya, Akio Kaneta, Sadao Adachi

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 126 KB

english, 2000

3

Near-field photoluminescence study in violet light emitting InGaN single quantum well structures

Akio Kaneta, Daisuke Yamada, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 200 KB

english, 2005

4

Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

Akio Kaneta, Mitsuru Funato, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 572 KB

english, 2006

5

Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation

Yoshiya Iwata, Takao Oto, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

6

Confocal microphotoluminescence of InGaN-based light-emitting diodes

Okamoto, Koichi, Kaneta, Akio, Kawakami, Yoichi, Fujita, Shigeo, Choi, Jungkwon, Terazima, Masahide, Mukai, Takashi

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 951 KB

english, 2005

7

Photoreflectance study in the E 1 and E 1 +Delta 1 transition regions of ZnTe

Kaneta, Akio, Adachi, Sadao

Journal:

Journal of Physics D Applied Physics

Year:

2000

Language:

english

File:

PDF, 524 KB

english, 2000

8

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

Kaneta, Akio, Kim, Yoon-Seok, Funato, Mitsuru, Kawakami, Yoichi, Enya, Yohei, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

9

Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy

Kaneta, Akio, Hashimoto, Tsuneaki, Nishimura, Katsuhito, Funato, Mitsuru, Kawakami, Yoichi

Journal:

Applied Physics Express

Year:

2010

Language:

english

File:

PDF, 1.08 MB

english, 2010

10

Photoreflectance study of hexagonal CdSe

Kaneta, Akio, Adachi, Sadao

Journal:

Journal of Physics D Applied Physics

Year:

1999

Language:

english

File:

PDF, 789 KB

english, 1999

11

Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress

Ishii, Ryota, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 1.57 MB

english, 2013

12

Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

Funato, Mitsuru, Kim, Yoon Seok, Hira, Takayuki, Kaneta, Akio, Kawakami, Yoichi, Miyoshi, Takashi, Nagahama, Shin-ichi

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 1.22 MB

english, 2013

13

All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

Ishii, Ryota, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi, Yamaguchi, Atsushi A.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 719 KB

english, 2010

14

[IEEE 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Nanyang Technological University, Nanyang Executive Centre, Singapore, China (2006.09.11-2006.09.14)] 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Optoelectronic Properties of InGaN SQW with Embedded AlGaN ¿-Layer

Park, Jongwoon, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi

Year:

2006

Language:

english

File:

PDF, 2.25 MB

english, 2006

15

[IEEE 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Nanyang Technological University, Nanyang Executive Centre, Singapore, China (2006.09.11-2006.09.14)] 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Performance Simulation of Organic Light-Emitting Diodes

Park, Jongwoon, Suganuma, Naotoshi, Kaneta, Akio, Kawakami, Yoichi

Year:

2006

Language:

english

File:

PDF, 1.92 MB

english, 2006

16

Spatial and temporal luminescence dynamics in an In[sub x]Ga[sub 1−x]N single quantum well probed by near-field optical microscopy

Kaneta, Akio, Okamoto, Koichi, Kawakami, Yoichi, Fujita, Shigeo, Marutsuki, Giichi, Narukawa, Yukio, Mukai, Takashi

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 431 KB

english, 2002

17

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Kaneta, Akio, Mutoh, Takashi, Kawakami, Yoichi, Fujita, Shigeo, Marutsuki, Giichi, Narukawa, Yukio, Mukai, Takashi

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 579 KB

english, 2003

18

Micromirror arrays to assess luminescent nano-objects

Kawakami, Yoichi, Kanai, Akinobu, Kaneta, Akio, Funato, Mitsuru, Kikuchi, Akihiko, Kishino, Katsumi

Journal:

Review of Scientific Instruments

Year:

2011

Language:

english

File:

PDF, 686 KB

english, 2011

19

Photoreflectance study in the E[sub 1] and E[sub 1]+Δ[sub 1] transition regions of CdTe

Kaneta, Akio, Adachi, Sadao

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 344 KB

english, 2000

20

Observation of optical instabilities in the photoluminescence of InGaN single quantum well

Micheletto, Ruggero, Abiko, Masayoshi, Kaneta, Akio, Kawakami, Yoichi, Narukawa, Yukio, Mukai, Takashi

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 421 KB

english, 2006

21

[IEEE 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) - Kyoto, Japan (2013.06.30-2013.07.4)] 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR) - Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate

Kaneta, Akio, Hira, Takayuki, Kim, Yoon Seok, Funato, Mitsuru, Kawakami, Yoichi, Miyoshi, Takashi, Nagahama, Shin-ichi

Year:

2013

Language:

english

File:

PDF, 1.19 MB

english, 2013

22

Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode

Kaneta, Akio, Izumi, Tomoaki, Okamoto, Koichi, Kawakami, Yoichi, Fujita, Shigeo, Narita, Yoshihito, Inoue, Tsutomu, Mukai, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 50 KB

english, 2001

23

SPIE Proceedings [SPIE SPIE LASE - San Francisco, California, USA (Saturday 21 January 2012)] Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII - Fabrication of photo-induced microstructure embedded inside ZnO crystal

Ishikawa, Yuichiro, Shimotsuma, Yasuhiko, Kaneta, Akio, Sakakura, Masaaki, Nishi, Masayuki, Miura, Kiyotaka, Hirao, Kazuyuki, Kawakami, Yoichi, Hennig, Guido, Xu, Xianfan, Gu, Bo, Nakata, Yoshiki

Year:

2012

Language:

english

File:

PDF, 2.22 MB

english, 2012

24

Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN

Ishii, Ryota, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

25

Optical Gain Spectroscopy of a Semipolar {20\bar21}-Oriented Green InGaN Laser Diode

Kim, Yoon Seok, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 493 KB

english, 2011

26

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

Funato, Mitsuru, Kaneta, Akio, Kawakami, Yoichi, Enya, Yohei, Nishizuka, Koji, Ueno, Masaki, Nakamura, Takao

Journal:

Applied Physics Express

Year:

2010

Language:

english

File:

PDF, 138 KB

english, 2010

27

Optical Gain Spectra of a (0001) InGaN Green Laser Diode

Funato, Mitsuru, Kim, Yoon Seok, Ochi, Yoshiaki, Kaneta, Akio, Kawakami, Yoichi, Miyoshi, Takashi, Nagahama, Shin-ichi

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 664 KB

english, 2013

28

Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells

Kawakami, Yoichi, Kaneta, Akio, Funato, Mitsuru

Journal:

Materials Science Forum

Year:

2008

Language:

english

File:

PDF, 3.44 MB

english, 2008

29

Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes

Kawakami, Yoichi, Inoue, Kohei, Kaneta, Akio, Okamoto, Koichi, Funato, Mitsuru

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.87 MB

english, 2015

30

SPIE Proceedings [SPIE Integrated Optoelectronics Devices - San Jose, CA (Saturday 25 January 2003)] Physics and Simulation of Optoelectronic Devices XI - Recombination mechanism in low-dimensional nitride semiconductors

Kawakami, Yoichi, Kaneta, Akio, Okamoto, Koichi, Inoue, Tsutomu, Satou, Fuminori, Narita, Yoshihito, Henneberger, Fritz, Marutsuki, Giichi, Narukawa, Yukio, Mukai, Takashi, Fujita, Shigeo, Osinski, Ma

Year:

2003

Language:

english

File:

PDF, 1.10 MB

english, 2003

31

SPIE Proceedings [SPIE Symposium on Integrated Optics - San Jose, CA (Saturday 20 January 2001)] Ultrafast Phenomena in Semiconductors V - Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors

Kawakami, Yoichi, Omae, Kunimichi, Kaneta, Akio, Okamoto, Koichi, Izumi, Tomoaki, Saijou, Shin, Inoue, Kenichi, Narukawa, Yukio, Mukai, Takashi, Fujita, Shigeo, Jiang, Hongxing, Tsen, Kong-Thon F., So

Year:

2001

Language:

english

File:

PDF, 935 KB

english, 2001

32

Single Quantum Wells Studied by Scanning Near-Field Optical Microscopy

Kawakami, Yoichi, Kaneta, Akio, Hashiya, Akira, Funato, Mitsuru

Journal:

Physical Review Applied

Year:

2016

Language:

english

File:

PDF, 1.52 MB

english, 2016

33

Temperature-Dependent Circularly Polarized Luminescence Measurement Using KBr Pellet Method

Kondo, Yoshiro, Suzuki, Satoko, Watanabe, Masayuki, Kaneta, Akio, Albertini, Paolo, Nagamori, Koushi

Journal:

Frontiers in Chemistry

Year:

2020

File:

PDF, 902 KB

2020

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